N-channel enhancement mode power MOSFET with a 30V drain-source voltage and 6.8A continuous drain current. Features a low 23.5mOhm drain-source resistance at 10V gate-source voltage. This surface-mount device is housed in an 8-pin SOIC N (SOP) package with gull-wing leads, measuring 5mm x 4mm x 1.55mm. Operating temperature range is -55°C to 150°C.
PackageSOIC N
MountingSurface Mount
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Technical Specifications
Vishay Si4214DY-T1-GE3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SOIC N
Package Description
Small Outline IC Narrow Body
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5(Max)
Package Width (mm)
4(Max)
Package Height (mm)
1.55(Max)
Seated Plane Height (mm)
1.75(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
6.8A
Maximum Gate Threshold Voltage
2.5V
Maximum Drain Source Resistance
23.5@10VmOhm
Typical Gate Charge @ Vgs
15@10V|[email protected]nC
Typical Gate Charge @ 10V
15nC
Typical Input Capacitance @ Vds
785@15VpF
Maximum Power Dissipation
2000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
125pF
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay Si4214DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay Si4214DY-T1-GE3 to view detailed technical specifications.
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