Dual N-channel MOSFET, 25V Vdss, 7.5A continuous drain current, and 19.5mR Rds On. Features 1.255nF input capacitance, 8ns fall time, 14ns turn-on delay, and 30ns turn-off delay. Housed in an 8-pin SOIC package for surface mounting, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 3.2W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4226DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Resistance | 19.5mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Input Capacitance | 1.255nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.2W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 19.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4226DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4226DY-T1-E3 to view detailed technical specifications.
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