Dual N-channel MOSFET, 25V Vdss, 7.5A continuous drain current, and 19.5mR Rds On. Features 1.255nF input capacitance, 8ns fall time, 14ns turn-on delay, and 30ns turn-off delay. Housed in an 8-pin SOIC package for surface mounting, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 3.2W.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4226DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
7.5A
Drain to Source Resistance
19.5mR
Drain to Source Voltage (Vdss)
25V
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Input Capacitance
1.255nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
19.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
30ns
Turn-On Delay Time
14ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4226DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4226DY-T1-E3 to view detailed technical specifications.
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