Surface mount 2-channel N-channel MOSFET with 25V drain-source voltage and 7.5A continuous drain current. Features low 19.5mR drain-to-source resistance and 2W power dissipation. Operates across a -55°C to 150°C temperature range, with fast switching times including 8ns fall time, 14ns turn-on delay, and 30ns turn-off delay. Packaged in an 8-SOIC case, this RoHS compliant component is ideal for various electronic applications.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
Vishay SI4226DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.5A
Drain to Source Resistance
19.5mR
Drain to Source Voltage (Vdss)
25V
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Input Capacitance
1.255nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
19.5mR
RoHS Compliant
Yes
Series
SI4
Turn-Off Delay Time
30ns
Turn-On Delay Time
14ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4226DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4226DY-T1-GE3 to view detailed technical specifications.
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