N-Channel Silicon MOSFET, 2-element, surface mount device in an SOP-8 package. Features 25V drain-source voltage, 8A continuous drain current, and 18mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to 12V and exhibits a nominal Vgs of 600mV. Includes 790pF input capacitance, 7ns turn-on delay, and 21ns turn-off delay. This component is RoHS compliant and designed for efficient switching applications.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4228DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8A
Drain to Source Resistance
15mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
18MR
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Input Capacitance
790pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
600mV
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
21ns
Turn-On Delay Time
7ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI4228DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4228DY-T1-GE3 to view detailed technical specifications.
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