PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
Vishay SI4276DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
30V
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.8W
Radiation Hardening
No
Rds On Max
15.3mR
RoHS Compliant
Yes
Series
TrenchFET®
Compliance
RoHS
Compliant
Datasheet
Vishay SI4276DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4276DY-T1-GE3 to view detailed technical specifications.
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