N-Channel Silicon MOSFET, featuring a 40V Drain-to-Source Voltage (Vdss) and 9.2A Continuous Drain Current (ID). This surface-mount device offers a low 20mΩ Drain-to-Source On-Resistance (Rds On Max) and a 1.2V Threshold Voltage. With a 580pF Input Capacitance and an 8ns Fall Time, it is designed for efficient switching. The component operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4288DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 580pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1.2V |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4288DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4288DY-T1-GE3 to view detailed technical specifications.
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