N-channel MOSFET with 30V drain-source voltage and 17A continuous drain current. Features low 3.25mΩ drain-to-source resistance and 1.6W maximum power dissipation. Packaged in an 8-SOIC surface-mount case, this component offers fast switching with a 16ns fall time and 24ns turn-on delay. Operating temperature range is -55°C to 150°C, with RoHS compliance and lead-free construction.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4336DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
17A
Drain to Source Resistance
3.25mR
Drain to Source Voltage (Vdss)
30V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
5.6nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
3.25mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
90ns
Turn-On Delay Time
24ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4336DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4336DY-T1-E3 to view detailed technical specifications.
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