Dual N-Channel MOSFET, 20V Vdss, 20A continuous drain current, and 9.4mR Rds On. Features include 1.3nF input capacitance, 10ns fall time, 22ns turn-on delay, and 32ns turn-off delay. Operates from -55°C to 150°C with 5.4W max power dissipation. Packaged in a 14-SOIC surface mount case, this RoHS compliant component is supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4340CDY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
20A
Drain to Source Resistance
9.4mR
Drain to Source Voltage (Vdss)
20V
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
16V
Height
1.5mm
Input Capacitance
1.3nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5.4W
Mount
Surface Mount
Number of Channels
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
9.4mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
32ns
Turn-On Delay Time
22ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4340CDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4340CDY-T1-E3 to view detailed technical specifications.
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