N-channel MOSFET, surface mount, SO package, featuring 20V Drain to Source Voltage (Vdss) and 19A Continuous Drain Current (ID). Offers low 2.7mR Drain to Source Resistance (Rds On Max) and 1.6W Max Power Dissipation. Operates across a -55°C to 150°C temperature range with 8.5nF Input Capacitance. Packaged in tape and reel, this RoHS compliant component is designed for efficient switching applications.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI4378DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
19A
Drain to Source Resistance
27mR
Drain to Source Voltage (Vdss)
20V
Fall Time
65ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Input Capacitance
8.5nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2.7mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
140ns
Turn-On Delay Time
85ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4378DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4378DY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.