N-channel MOSFET with 30V drain-source voltage and 10A continuous drain current. Features low 8.5mΩ drain-to-source resistance at 10V gate-source voltage and 3.1W power dissipation. Surface mountable in an SO package, this component offers fast switching with 10ns turn-on delay and 13ns fall time. Operating temperature range from -55°C to 150°C, with RoHS compliance.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4384DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4384DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4384DY-T1-GE3 to view detailed technical specifications.
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