P-channel, silicon, surface-mount JFET with a continuous drain current of 8.7A and a drain-to-source voltage of -40V. Features a low drain-source on-resistance of 14mΩ, a threshold voltage of -3V, and fast switching times with a turn-on delay of 16ns and fall time of 15ns. This 1-element transistor operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.5W. Packaged in a RoHS compliant SOP-8 (SO) package, suitable for tape and reel mounting.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI4401BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8.7A
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
14MR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
14mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
97ns
Turn-On Delay Time
16ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4401BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4401BDY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.