P-channel MOSFET, 40V drain-source voltage, 8.7A continuous drain current, and 15.5mΩ maximum drain-source on-resistance. Features a 1.5W maximum power dissipation and operates within a -55°C to 150°C temperature range. Surface mountable in a SOIC package, this component offers fast switching with turn-on delay of 17ns and fall time of 55ns.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4401DY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.7A
Drain to Source Resistance
15.5mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
15.5mR
Fall Time
55ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
15.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
122ns
Turn-On Delay Time
17ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4401DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4401DY-T1-E3 to view detailed technical specifications.
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