N-Channel Silicon MOSFET, TrenchFET® series, designed for surface mounting in an SOIC package. Features a continuous drain current of 15A and a drain-to-source voltage of 30V. Offers a low drain-source on-resistance of 6.5mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. Includes a nominal gate-to-source voltage of 1V and an input capacitance of 2nF. This component is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Vishay SI4404DY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
15A
Drain to Source Resistance
6.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
6.5mR
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
6.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
105ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI4404DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4404DY-T1-E3 to view detailed technical specifications.
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