N-channel silicon MOSFET, surface mountable in an SO-8 package. Features a continuous drain current of 13A, drain-to-source voltage of 30V, and a low on-resistance of 4.5mΩ. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W. Includes fast switching characteristics with turn-on delay time of 21ns and fall time of 15ns.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Vishay SI4406DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
13A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
3.18mm
Length
4.88mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
4.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
100ns
Turn-On Delay Time
21ns
Weight
0.006596oz
Width
3.91mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4406DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4406DY-T1-E3 to view detailed technical specifications.
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