N-channel MOSFET, 30V drain-source voltage, 13A continuous drain current, and 4.5mΩ drain-to-source resistance. Features include a 4.5mΩ Rds On, 20V gate-to-source voltage, and 1.6W max power dissipation. This surface-mount component operates between -55°C and 150°C with fast switching times, including a 21ns turn-on delay and 30ns fall time. Packaged in an 8-pin SOIC for tape and reel distribution.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4406DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Resistance | 4.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.18mm |
| Length | 4.88mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.006596oz |
| Width | 3.91mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay SI4406DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4406DY-T1-GE3 to view detailed technical specifications.
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