N-channel MOSFET, 30V drain-source voltage, 13A continuous drain current, and 4.5mΩ drain-to-source resistance. Features include a 4.5mΩ Rds On, 20V gate-to-source voltage, and 1.6W max power dissipation. This surface-mount component operates between -55°C and 150°C with fast switching times, including a 21ns turn-on delay and 30ns fall time. Packaged in an 8-pin SOIC for tape and reel distribution.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4406DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
13A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
3.18mm
Length
4.88mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.5mR
RoHS Compliant
No
Series
TrenchFET®
Turn-Off Delay Time
100ns
Turn-On Delay Time
21ns
Weight
0.006596oz
Width
3.91mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay SI4406DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4406DY-T1-GE3 to view detailed technical specifications.
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