N-channel MOSFET with 20V drain-source breakdown voltage and 14A continuous drain current. Features low 4.5mΩ drain-source on-resistance and 3.5W maximum power dissipation. Surface-mount SOIC package with 26ns fall time and 60ns turn-off delay. Operates from -55°C to 150°C, RoHS compliant, and packaged in tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Vishay SI4408DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
4.5mR
Fall Time
26ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.5W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
60ns
Turn-On Delay Time
42ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4408DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4408DY-T1-E3 to view detailed technical specifications.
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