Vishay
SI4410BDY
Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
PackageSOIC
Power1.4W
Quick Jump:
Technical Specifications
Vishay SI4410BDY technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
30V
Max Operating Temperature
150°C
Max Power Dissipation
1.4W
Power Dissipation
1.4W
Reach SVHC Compliant
No
RoHS Compliant
No
Threshold Voltage
3V
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI4410BDY Datasheet
Download the complete datasheet for Vishay SI4410BDY to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
