N-channel, small-signal MOSFET for general-purpose applications. Features a 30V drain-source voltage rating and a continuous drain current of 7.5A. Offers a low drain-source on-resistance of 13.5mΩ maximum. Operates within a temperature range of -55°C to 150°C. Packaged in an 8-pin SOIC surface-mount package.
PackageSOIC
MountingSurface Mount
Power1.4W
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Technical Specifications
Vishay SI4410BDY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.5A
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
13.5mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
0.061inch
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.4W
Radiation Hardening
No
Rds On Max
13.5mR
Reach SVHC Compliant
Unknown
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
40ns
Turn-On Delay Time
10ns
Width
0.157inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI4410BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4410BDY-T1-E3 to view detailed technical specifications.
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