The SI4413ADY-T1-GE3 is a P-CHANNEL TrenchFET MOSFET from Vishay, featuring a maximum drain to source voltage of -30V and a continuous drain current of 10.5A. It has a maximum power dissipation of 1.5W and a maximum operating temperature of 150°C. The device is packaged in a SO package and is RoHS compliant. It is suitable for use in a variety of applications, including power management and switching circuits.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4413ADY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Resistance | 7.5mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 97ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 7.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 21ns |
| Weight | 0.006596oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4413ADY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4413ADY-T1-GE3 to view detailed technical specifications.
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