N-channel, general-purpose small-signal MOSFET with a continuous drain current of 9.5A and a drain-to-source voltage of 30V. Features low on-resistance of 8.5mΩ, ideal for efficient switching applications. Operates across a wide temperature range from -55°C to 150°C, with fast switching speeds including a 15ns turn-on delay and 11ns fall time. Packaged in a compact SOP-8 surface-mount case, this component is halogen-free and RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4420BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
9.5A
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
8.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4420BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4420BDY-T1-GE3 to view detailed technical specifications.
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