N-channel, general-purpose small-signal MOSFET with a continuous drain current of 9.5A and a drain-to-source voltage of 30V. Features low on-resistance of 8.5mΩ, ideal for efficient switching applications. Operates across a wide temperature range from -55°C to 150°C, with fast switching speeds including a 15ns turn-on delay and 11ns fall time. Packaged in a compact SOP-8 surface-mount case, this component is halogen-free and RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4420BDY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4420BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4420BDY-T1-GE3 to view detailed technical specifications.
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