P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a 20V drain-source voltage (Vdss) and a continuous drain current (ID) of 10A. Offers a low drain-source on-resistance (Rds On) of 8.75mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. Packaged in an 8-pin SO surface-mount configuration.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4421DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
10A
Drain to Source Resistance
8.75mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
8.75MR
Fall Time
90ns
Gate to Source Voltage (Vgs)
8V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
-800mV
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
8.75mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
350ns
Turn-On Delay Time
45ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4421DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4421DY-T1-E3 to view detailed technical specifications.
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