P-Channel MOSFET, 20V Drain-Source Breakdown Voltage, 10A Continuous Drain Current, and 7.5mΩ Max Drain-Source On Resistance. Features a 75ns Turn-On Delay Time and 165ns Fall Time. Surface mountable in an 8-SOIC package, operating from -55°C to 150°C with 1.5W Max Power Dissipation.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4423DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
7.5mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
7.5mR
Fall Time
165ns
Gate to Source Voltage (Vgs)
8V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
-400mV
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
7.5mR
Reach SVHC Compliant
No
Series
TrenchFET®
Threshold Voltage
-400mV
Turn-Off Delay Time
460ns
Turn-On Delay Time
75ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4423DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4423DY-T1-E3 to view detailed technical specifications.
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