N-channel MOSFET, 30V Vdss, 14A continuous drain current, and 4.5mΩ maximum drain-source on-resistance. Features a 1V threshold voltage, 14ns fall time, 20ns turn-on delay, and 60ns turn-off delay. Surface mountable in an 8-SOIC package with a maximum power dissipation of 1.6W and an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Vishay SI4430BDY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
14A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
4.5mR
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
60ns
Turn-On Delay Time
20ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4430BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4430BDY-T1-E3 to view detailed technical specifications.
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