
N-Channel Silicon Field-Effect Transistor (FET) with 30V Drain-Source Voltage (Vdss) and 14A Continuous Drain Current (ID). Features low 4.5mΩ Drain-to-Source Resistance (Rds On Max) and a 3V Threshold Voltage. This surface-mount device, packaged in SO-8, offers fast switching with a 20ns Turn-On Delay Time and 14ns Fall Time. Operates from -55°C to 150°C with 1.6W Max Power Dissipation. HALOGEN FREE and ROHS COMPLIANT.
Vishay SI4430BDY-T1-GE3 technical specifications.
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