N-Channel Silicon Field-Effect Transistor (FET) with 30V Drain-Source Voltage (Vdss) and 14A Continuous Drain Current (ID). Features low 4.5mΩ Drain-to-Source Resistance (Rds On Max) and a 3V Threshold Voltage. This surface-mount device, packaged in SO-8, offers fast switching with a 20ns Turn-On Delay Time and 14ns Fall Time. Operates from -55°C to 150°C with 1.6W Max Power Dissipation. HALOGEN FREE and ROHS COMPLIANT.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4430BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
14A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
60ns
Turn-On Delay Time
20ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4430BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4430BDY-T1-GE3 to view detailed technical specifications.
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