Vishay
SI4431ADY-T1
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
PackageSO
PolarityP-CHANNEL
Power1.35W
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Technical Specifications
Vishay SI4431ADY-T1 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
5.3A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
30mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.35W
RoHS Compliant
No
Turn-Off Delay Time
40ns
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI4431ADY-T1 Datasheet
Download the complete datasheet for Vishay SI4431ADY-T1 to view detailed technical specifications.
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