P-channel, 1-element silicon MOSFET for small signal applications. Features 30V drain-source voltage, 7A continuous drain current, and 32mΩ drain-source resistance. Operates from -55°C to 150°C with a maximum power dissipation of 4.2W. Packaged in an SOIC-8 surface-mount case, this RoHS compliant component offers fast switching with turn-on delay of 38ns and fall time of 11ns.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4431CDY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
7A
Drain to Source Resistance
32mR
Drain to Source Voltage (Vdss)
30V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.006nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.2W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
32mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
22ns
Turn-On Delay Time
38ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4431CDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4431CDY-T1-E3 to view detailed technical specifications.
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