P-channel, silicon, surface-mount field-effect transistor designed for small signal applications. Features a continuous drain current of 8.1A and a drain-to-source breakdown voltage of -30V. Offers a low drain-source on-resistance of 24mR, with turn-on and turn-off delay times of 42ns and 40ns respectively. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. Packaged in an SOP-8 (SO) case, this component is halogen-free and RoHS compliant.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4435DDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8.1A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
24MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.35nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
24mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
40ns
Turn-On Delay Time
42ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4435DDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4435DDY-T1-GE3 to view detailed technical specifications.
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