The SI4435DY is a N-Channel MOSFET with a drain to source breakdown voltage of -150V and a continuous drain current of -8.8A. It has a power dissipation of 2.5W and is packaged in a SOIC package. The device is lead free and has an input capacitance of 1.6nF. It is not RoHS compliant and does not meet Reach SVHC compliance.
PackageSOIC
Current Rating-8.8A
Power2.5W
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Technical Specifications
Vishay SI4435DY technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -8.8A |
| Current Rating | -8.8A |
| Drain to Source Breakdown Voltage | -150V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | -30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI4435DY Datasheet
Download the complete datasheet for Vishay SI4435DY to view detailed technical specifications.
No datasheet is available for this part.