N-channel MOSFET with 30V drain-source voltage and 36A continuous drain current. Features low 2.7mΩ drain-source resistance and 7.8W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-SOIC surface-mount case, this component is RoHS compliant and supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4438DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
36A
Drain to Source Resistance
2.7mR
Drain to Source Voltage (Vdss)
30V
Fall Time
18ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
4.645nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
7.8W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
2.7mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
47ns
Turn-On Delay Time
36ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4438DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4438DY-T1-E3 to view detailed technical specifications.
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