N-channel MOSFET with 30V drain-source voltage and 36A continuous drain current. Features low 27mΩ drain-source resistance and 7.8W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-SOIC surface-mount case, this component offers fast switching with 17ns turn-on and 10ns fall times.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4438DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Resistance | 27mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 4.645nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 17ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4438DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4438DY-T1-GE3 to view detailed technical specifications.
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