N-Channel Silicon FET, 30V Vdss, 15A continuous drain current, and 4.5mR drain-source on-resistance. This single-element field-effect transistor features a 1.5V nominal gate-source voltage and 1.5V threshold voltage. Operating from -55°C to 150°C, it offers a 1.6W maximum power dissipation and is packaged in an 8-pin SOP for surface mounting. Key switching characteristics include an 11ns fall time and 17ns turn-on delay time.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Vishay SI4442DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
15A
Drain to Source Resistance
4.5mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
4.5mR
Dual Supply Voltage
30V
Fall Time
11ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Nominal Vgs
1.5V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
1.5V
Turn-Off Delay Time
125ns
Turn-On Delay Time
17ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4442DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4442DY-T1-E3 to view detailed technical specifications.
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