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Technical Specifications
Vishay SI4446DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.9A
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
40V
Fall Time
8ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
700pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.6V
Turn-Off Delay Time
27ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI4446DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4446DY-T1-GE3 to view detailed technical specifications.
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