P-channel power MOSFET for general-purpose applications. Features a 40V drain-source voltage and 3.3A continuous drain current. Offers a low 54mΩ drain-to-source resistance at a 10V gate-source voltage. Packaged in a surface-mount SOIC with a 1.1W maximum power dissipation. Compliant with RoHS and halogen-free standards.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4447DY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Resistance | 54mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.5mm |
| Input Capacitance | 805pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 72mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4447DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4447DY-T1-GE3 to view detailed technical specifications.
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