P-channel power MOSFET for general-purpose applications. Features a 40V drain-source voltage and 3.3A continuous drain current. Offers a low 54mΩ drain-to-source resistance at a 10V gate-source voltage. Packaged in a surface-mount SOIC with a 1.1W maximum power dissipation. Compliant with RoHS and halogen-free standards.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4447DY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.3A
Drain to Source Resistance
54mR
Drain to Source Voltage (Vdss)
40V
Fall Time
38ns
Gate to Source Voltage (Vgs)
16V
Height
1.5mm
Input Capacitance
805pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
72mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
74ns
Turn-On Delay Time
8ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4447DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4447DY-T1-GE3 to view detailed technical specifications.
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