N-channel MOSFET with 12V drain-source voltage (Vdss) and 32A continuous drain current (ID). Features low 1.7mΩ Rds On at 4.5V gate-source voltage, 12.35nF input capacitance, and 7.8W maximum power dissipation. Designed for surface mounting in an SO package, this component offers fast switching with turn-on delay of 38ns and fall time of 33ns. Operating temperature range spans -55°C to 150°C, with RoHS compliance.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4448DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
32A
Drain to Source Resistance
17mR
Drain to Source Voltage (Vdss)
12V
Fall Time
33ns
Gate to Source Voltage (Vgs)
8V
Height
1.55mm
Input Capacitance
12.35nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
7.8W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.7mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
240ns
Turn-On Delay Time
38ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4448DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4448DY-T1-E3 to view detailed technical specifications.
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