N-channel MOSFET, 12V Vds, 50A continuous drain current, 1.7mΩ Rds On. Features 1V threshold voltage, 8V gate-source voltage, and 3.5W max power dissipation. Surface mount SO package with 12.35nF input capacitance and 33ns fall time. Operates from -55°C to 150°C, RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4448DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
50A
Drain to Source Resistance
17mR
Drain to Source Voltage (Vdss)
12V
Fall Time
33ns
Gate to Source Voltage (Vgs)
8V
Height
1.55mm
Input Capacitance
12.35nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.7mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
240ns
Turn-On Delay Time
38ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4448DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4448DY-T1-GE3 to view detailed technical specifications.
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