
N-Channel Power MOSFET, SO package, featuring 60V Drain to Source Breakdown Voltage and 24mΩ maximum Drain-source On Resistance. This surface mount component offers a continuous drain current of 7.5A and a maximum power dissipation of 2.5W. Operating across a temperature range of -55°C to 150°C, it includes fast switching characteristics with turn-on delay time of 16ns and fall time of 21ns. RoHS compliant and lead-free, this transistor is supplied in tape and reel packaging.
Vishay SI4450DY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 24mR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SI4 |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 16ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4450DY-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.
