P-channel MOSFET, designed for general-purpose small signal applications. Features a 12V drain-source voltage (Vdss) and a continuous drain current (ID) of 10A. Offers a low drain-source on-resistance (Rds On) of 8.25mR. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.5W. Packaged in a surface-mount SOP-8 (SO) package, this RoHS-compliant component is supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4451DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 8.25mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 8.25MR |
| Fall Time | 125ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 8.25mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 315ns |
| Turn-On Delay Time | 55ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4451DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4451DY-T1-E3 to view detailed technical specifications.
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