P-channel MOSFET featuring 150V drain-source voltage and 8.9A continuous drain current. Offers 295mΩ maximum drain-source on-resistance and 5.9W maximum power dissipation. This surface mount SOIC-8 packaged component operates within a -50°C to 150°C temperature range. Includes 11ns turn-on delay and 35ns fall time.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4455DY-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 295mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 295mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Input Capacitance | 1.19nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 5.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 295mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4455DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4455DY-T1-E3 to view detailed technical specifications.
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