P-channel, silicon, surface-mount JFET with a continuous drain current of 9.8A and a drain-source voltage of -20V. Features a low drain-source on-resistance of 11mR, ideal for switching applications. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. Packaged in an SOIC-8 (SO) package, this component is RoHS compliant and supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4463BDY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9.8A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 11mR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.4V |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4463BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4463BDY-T1-E3 to view detailed technical specifications.
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