P-channel, silicon, surface-mount JFET with a continuous drain current of 9.8A and a drain-source voltage of -20V. Features a low drain-source on-resistance of 11mR, ideal for switching applications. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. Packaged in an SOIC-8 (SO) package, this component is RoHS compliant and supplied on tape and reel.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4463BDY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
9.8A
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
11mR
Fall Time
60ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.5W
Rds On Max
11mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.4V
Turn-Off Delay Time
115ns
Turn-On Delay Time
35ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4463BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4463BDY-T1-E3 to view detailed technical specifications.
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