P-channel, 1-element Silicon Metal-oxide Semiconductor FET designed for surface mounting. Features a continuous drain current of 9.8A, a drain-to-source voltage of -20V, and a low on-resistance of 11mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. Includes fast switching characteristics with turn-on delay time of 35ns and fall time of 75ns. Packaged in SOIC-8 (SO) for tape and reel distribution.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4463BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
9.8A
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
75ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
11mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.4V
Turn-Off Delay Time
115ns
Turn-On Delay Time
35ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4463BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4463BDY-T1-GE3 to view detailed technical specifications.
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