Vishay
SI4463DY-T1
TRANSISTOR 9000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4463DY-T1 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | SI4 |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay SI4463DY-T1 Datasheet
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