
P-channel MOSFET, surface mount, in a SOP-8 package. Features a continuous drain current of 20A and a drain-to-source voltage of -8V. Offers a low on-resistance of 9mR and a threshold voltage of -450mV. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 3W. Halogen-free and RoHS compliant.
Vishay SI4465ADY-T1-GE3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | -8V |
| Fall Time | 112ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.5mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -450mV |
| Turn-Off Delay Time | 168ns |
| Turn-On Delay Time | 33ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4465ADY-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
