Vishay
SI4465DY-T1
Power Field-Effect Transistor, 14A I(D), 8V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
PackageSOIC
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
Vishay SI4465DY-T1 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
14A
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
-8V
Fall Time
190ns
Gate to Source Voltage (Vgs)
8V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
RoHS Compliant
No
Series
SI4
Turn-Off Delay Time
380ns
Turn-On Delay Time
45ns
Weight
0.006596oz
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI4465DY-T1 Datasheet
Download the complete datasheet for Vishay SI4465DY-T1 to view detailed technical specifications.
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