N-channel power MOSFET with 20V drain-source voltage and 9.5A continuous drain current. Features low 9mΩ drain-source on-resistance and 1.5W power dissipation. Designed for surface mounting in an SOP-8 package, this RoHS compliant component offers fast switching with a 20ns turn-on delay and 15ns fall time. Operates across a wide temperature range from -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
Quick Jump:
Technical Specifications
Vishay SI4466DY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
9.5A
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
9mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
12V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Nominal Vgs
600mV
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
9mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
150ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI4466DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4466DY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
