N-channel power MOSFET with 20V drain-source voltage and 9.5A continuous drain current. Features low 9mΩ drain-source on-resistance and 1.5W power dissipation. Designed for surface mounting in an SOP-8 package, this RoHS compliant component offers fast switching with a 20ns turn-on delay and 15ns fall time. Operates across a wide temperature range from -55°C to 150°C.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Vishay SI4466DY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9.5A |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 9mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | 600mV |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 600mV |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4466DY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4466DY-T1-E3 to view detailed technical specifications.
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