N-channel MOSFET, surface mountable in an 8-pin SOIC package. Features a 60V drain-to-source breakdown voltage and a continuous drain current of 9A. Offers a low 11mΩ drain-to-source resistance at a nominal 2V gate-to-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 1.85W. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 12ns.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.85W
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Technical Specifications
Vishay SI4470EY-T1-E3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
11mR
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
60V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.85W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.85W
Radiation Hardening
No
Rds On Max
11mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
50ns
Turn-On Delay Time
16ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4470EY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI4470EY-T1-E3 to view detailed technical specifications.
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