P-channel, silicon, surface-mount field-effect transistor designed for small signal applications. Features a continuous drain current of 18A and a drain-to-source voltage of -20V. Offers a low drain-to-source resistance of 6.2mR at a gate-to-source voltage of 12V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3W. Packaged in a compact SO package, this device is HALOGEN FREE and ROHS COMPLIANT.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power3W
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Technical Specifications
Vishay SI4477DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 6.2mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 4.6nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3W |
| Radiation Hardening | No |
| Rds On Max | 6.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4477DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4477DY-T1-GE3 to view detailed technical specifications.
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