P-channel, silicon, surface-mount field-effect transistor designed for small signal applications. Features a continuous drain current of 18A and a drain-to-source voltage of -20V. Offers a low drain-to-source resistance of 6.2mR at a gate-to-source voltage of 12V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3W. Packaged in a compact SO package, this device is HALOGEN FREE and ROHS COMPLIANT.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power3W
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Technical Specifications
Vishay SI4477DY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
18A
Drain to Source Resistance
6.2mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
42ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
4.6nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
6.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.5V
Turn-Off Delay Time
100ns
Turn-On Delay Time
42ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4477DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4477DY-T1-GE3 to view detailed technical specifications.
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