
N-Channel Power MOSFET, SO package, featuring 80V Drain-Source Voltage (Vdss) and 6A Continuous Drain Current (ID). Offers a low Drain-Source On Resistance (Rds On) of 35mR. Operates with a Gate-Source Voltage (Vgs) up to 20V and a maximum power dissipation of 2.5W. Designed for surface mounting with fast switching times, including a 12.5ns turn-on delay and 22ns fall time. This RoHS compliant component is lead-free and suitable for operation between -55°C and 150°C.
Vishay SI4480DY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 35mR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 12.5ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI4480DY-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.
