The SI4480DY-T1-GE3 is a single N-channel MOSFET from Vishay with a maximum operating voltage of 80V and a continuous drain current of 6A. It features a drain to source resistance of 35mR and a maximum power dissipation of 2.5W. The device is packaged in a SO package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageSO
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4480DY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Series | SI4 |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 12.5ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI4480DY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4480DY-T1-GE3 to view detailed technical specifications.
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