N-Channel Power MOSFET, SO-8 package, featuring 100V drain-source breakdown voltage and 4.6A continuous drain current. Offers low on-state resistance of 60mΩ at nominal 2V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 25ns.
PackageSO
Voltage100V
Current46A
PolarityN-CHANNEL
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Technical Specifications
Vishay SI4482DY technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
4.6A
Current
46A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
100V
Dual Supply Voltage
100V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Nominal Vgs
2V
Number of Channels
1
On-State Resistance
80mR
Package Quantity
100
Polarity
N-CHANNEL
RoHS Compliant
No
Series
SI4
Turn-Off Delay Time
60ns
Turn-On Delay Time
13ns
Voltage
100V
Weight
0.002998oz
Width
4mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI4482DY Datasheet
Download the complete datasheet for Vishay SI4482DY to view detailed technical specifications.
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