P-channel JFET with 13.5A continuous drain current and 8.8mΩ drain-source on-resistance. Features -30V drain-to-source voltage and 25V gate-to-source voltage. Operates from -55°C to 150°C with a maximum power dissipation of 5.9W. Surface mount SOIC package with 3.9nF input capacitance. HALOGEN FREE and ROHS COMPLIANT.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI4483ADY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
13.5A
Drain to Source Resistance
8.8mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
8.8mR
Fall Time
28ns
Gate to Source Voltage (Vgs)
25V
Height
1.5mm
Input Capacitance
3.9nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5.9W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
8.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2.1V
Turn-Off Delay Time
43ns
Turn-On Delay Time
70ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI4483ADY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI4483ADY-T1-GE3 to view detailed technical specifications.
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